Micron Reveals Progress on HBM4 & HBM4E: Mass Production Set for 2026
Micron has announced significant advancements in its HBM4 and HBM4E memory processes, with plans to begin mass production by 2026. The next-generation high-bandwidth memory (HBM) solutions aim to deliver cutting-edge performance, targeting the increasing demands of AI and advanced computing.
Micron’s HBM4: A Performance Leap Forward
Micron’s HBM4 memory will deliver a 50%+ performance improvement over HBM3E, leveraging its 1β process technology for market-leading power efficiency. The new memory will feature:
16 DRAM dies per stack, each with 32 GB capacity.
A 2048-bit wide interface, offering superior bandwidth.
Integration of memory and logic semiconductors into a single package, eliminating traditional packaging technology and enhancing performance efficiency.
To achieve this, Micron is partnering with TSMC for advanced logic semiconductor manufacturing, aligning with competitors like SK Hynix.
HBM4E: Customization and Future Potential
Micron is already working on HBM4E, the successor to HBM4, which introduces an option for customized logic base dies tailored to specific customer needs. This innovation is expected to:
Offer a paradigm shift in memory design.
Drive improved financial performance through customized solutions.
Adoption & Industry Impact
The HBM4 memory technology is expected to power key AI platforms, including:
NVIDIA Rubin AI architecture.
AMD Instinct MI400 series.
Micron’s production lines are reportedly booked through 2025, reflecting the surging demand for HBM in AI and advanced computing sectors.
Competitive Landscape
Micron joins SK Hynix and Samsung in the race for HBM4 dominance. With HBM4E development already underway, Micron is positioning itself to compete aggressively in a market where high-bandwidth memory is critical for AI, machine learning, and data-intensive workloads.
HBM4 production will ramp up in 2026, with widespread adoption expected in AI accelerators and advanced computing platforms shortly after.
