SK Hynix Launches World’s First 321-Layer TLC-Based 4D NAND Flash
SK Hynix has officially begun mass production of its 321-layer 4D NAND Flash, making it the world’s first Triple-Level Cell (TLC)-based NAND to reach this milestone. This cutting-edge technology marks a significant leap forward, increasing storage density, speed, and efficiency while enhancing reliability.
What Makes 321-Layer NAND Unique?
The 321-layer NAND represents a 35% increase in layer count compared to the company's previous 238-layer NAND. Here's what this innovative technology offers:
Higher Storage Capacity: The NAND features 1TB memory chips tailored for advanced storage solutions.
Improved Performance: Data transfer speeds are boosted by 12%, with read performance enhanced by 13%.
Energy Efficiency: Power consumption is reduced by over 10% during read operations, extending battery life in devices.
Advanced Manufacturing Process: SK Hynix utilized its proprietary "3 Plugs" process technology, which integrates vertical holes and alignment correction for enhanced production accuracy and lower wafer deformation.
Why This Matters for AI and Data Centers
This next-gen NAND is optimized for AI-centric applications and data centers, where power efficiency and high-speed processing are critical. AI systems requiring ultra-reliable, high-capacity memory will benefit from the increased productivity of the 321-layer NAND, which achieves 59% higher manufacturing efficiency compared to its predecessors.
Staying Ahead in the Competition
With this groundbreaking achievement, SK Hynix positions itself ahead of competitors like Samsung and Micron in the NAND market. The early launch of mass production, originally scheduled for Q1 2025, underscores the company’s ambition to dominate the ultra-high-performance memory space.
The 321-layer NAND Flash signals a new era for memory technology, enabling innovations in AI, data processing, and beyond. What are your thoughts on how this will impact the industry? Let us know in the comments below!
