SK hynix Achieves 80% Yield on 1c DRAM, Paving the Way for Mass Production and Dominance in HBM and DDR5 Markets

SK hynix continues to assert its leadership in the memory semiconductor sector, reaching a major technological milestone with its next-generation 1c (6th-gen 10nm-class) DRAM technology. According to a report from Korean media outlet Hankooki, the company has achieved yield rates as high as 80-90%, a sharp improvement over the 60% yield rate reported in the second half of 2024.

This leap in fabrication efficiency positions SK hynix to not only maintain but expand its competitive lead, particularly in the high-bandwidth memory (HBM) and future DDR5 markets. As the global semiconductor industry braces for the HBM4 revolution, SK hynix’s early success with 1c DRAM gives it a clear operational and strategic edge over rivals, including Samsung.

1c DRAM Yield Surge Marks Strategic Inflection Point

The jump in yield rates signifies a critical point for the adoption of 1c DRAM in volume manufacturing. These yields—approaching production viability thresholds—signal that mass production is imminent. However, SK hynix’s immediate focus remains on HBM4 production, where the 1c DRAM process is expected to be deployed first, likely within the more advanced HBM4E variants. As HBM4 becomes central to next-generation AI, HPC, and data center solutions, SK hynix is now better positioned than ever to deliver market-leading performance and capacity.

Samsung Still Catching Up in the DRAM Race

In contrast, Samsung—once considered the undisputed leader in the memory segment—continues to face challenges with its own 1c DRAM development. Reports suggest Samsung is in the process of reevaluating and revising its approach to the 1c node due to underwhelming yield metrics. Despite unveiling its 12nm DDR5 DRAM with AMD compatibility earlier this year, Samsung is currently trailing in both yield maturity and timeline for mass production of HBM4-class modules.

A Strategic Advantage in HBM and DDR5

The implications of SK hynix’s advancement go beyond HBM4. As the company strengthens its foothold in HBM—where it already dominates the HBM3 market used in NVIDIA and AMD's leading AI chips—this progress paves the way for future 1c-based DDR5 modules, expected to arrive in volume once HBM4 supply stabilizes.

With HBM4 and HBM4E expected to define the next era of high-speed memory for AI, cloud, and advanced computation, SK hynix is on track to become the first in the world to begin mass production, significantly widening the technology gap with competitors.

Are you watching the DRAM wars unfold? What are your thoughts on SK hynix's leap ahead of Samsung in the HBM race? Join the conversation below.